SUD25N06-45L v ds (v) r ds(on) ( ) i d (a) 60 0.035 @ v gs = 10 v 25 60 0.045 @ v gs = 4.5 v 22 to-252 s gd top view drain connected to tab order number: SUD25N06-45L d g s n-channel mosfet
parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 25 a continuous drain current (t j = 175 c) t c = 100 c i d 16 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 25 avalanche current i ar 25 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 31 mj maximum power dissipation t c = 25 c p d 50 w maximum power dissipation t a = 25 c p d 2.5 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit maximum junction-to-ambient a r thja 60 c/w maximum junction-to-case r thjc 3.0 c/w n-channel 60 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 5
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